tsc136l high voltage npn transistor 1 / 6 version: b 09 to - 251 (ipak) to - 252 (dpak) features high voltage high speed switching structure silicon triple diffused type npn silicon transistor ordering information part no. package packing tsc136lcp ro to - 252 2.5kp cs / 13 reel tsc136lcp rog to - 252 2.5kpcs / 13 reel tsc136lch c5 to - 251 70pcs / tube tsc136lch c5g to - 251 70pcs / tube note: g denote for halogen free product absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit collector - base voltage v cbo 700 v collector - emitter voltage v ceo 400 v emitter - base voltage v ebo 9 v total dissipation @ t c 25 o c p tot 4 0 w collector peak current (tp <5ms) i cm 4 a collector current i c 2 a base peak current (tp <5ms) i bm 2 a base current i b 1.5 a maximum operating junction temperature t j +150 o c storage temperature range t stg - 65 to +150 o c thermal performance parameter symbol limit unit junction to case thermal resistance r? jc 2.08 o c/w block diagra m pin definition : 1. base 2. collector 3. emitter product summary bv ceo 400v bv cbo 7 00v i c 2a v ce(sat) 0.6 v @ i c / i b = 1.5a / 0.5 a
tsc136l high voltage npn transistor 2 / 6 version: b 09 electrical specifications p arameter conditions symbol min typ max u nit static collector - base voltage i c = 10ma, i b = 0 bv cbo 700 -- -- v collector - emitter breakdown voltage a i c = 10ma, i e = 0 bv ceo 400 -- -- v emitter - base breakdown voltage i e = 1ma, i c = 0 bv ebo 9 -- -- v coll ector - base cutoff current v cb = 700v, i e = 0 i cbo -- -- 100 ua collector - emitter cutoff current v ce = 400 v, i b = 0 i ebo -- -- 100 ua i c =0.5a , i b = 0.1 a v ce(sat)1 -- -- 0.4 i c =1 a , i b = 0.25 a v ce(sat)2 -- -- 0.5 collector - emitter saturation voltage a i c =1.5 a , i b = 0.5a v ce(sat)3 -- -- 0.6 v base - emitter saturation voltage a i c =0.5a , i b = 0.1 a v b e(sat) -- -- 1.2 v v ce = 10 v, i c = 500 ma h fe 1 20 -- 40 dc current gain v ce = 5v, i c = 2 a h fe 2 5 -- -- frequency v ce = 10v, i c = 0.5a f t 4 -- -- mhz out put capacitance v cb = 10v, f = 0.1mhz cob -- 21 -- pf turn on time t on -- 0.4 -- us storage time t stg -- 2.0 -- us fall time v cc = 125v, i c = 1a, i b1 = 0.2a. t f -- 0.16 -- us notes: a. pulsed duration = 300us, duty cycle 1.5%
tsc136l high voltage npn transistor 3 / 6 version: b 09 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) figure 1. static characteri sti c s figure 2. dc current gain figure 3. vce(sat) v.s. vbe(sat) figure 4. power de rating
tsc136l high voltage npn transistor 4 / 6 version: b 09 sot - 252 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to - 2 52 di mension millimeters inches dim min max min max a 2.3bsc 0.09bsc a1 4.6bsc 0.18bsc b 6.80 7.20 0.268 0.283 c 5.40 5.60 0.213 0.220 d 6.40 6.65 0.252 0.262 e 2.20 2.40 0.087 0.094 f 0.00 0.20 0.000 0.008 g 5.20 5.40 0.205 0.213 g1 0.75 0.85 0.030 0.033 g2 0.55 0.65 0.022 0.026 h 0.35 0.65 0.014 0.026 i 0.90 1.50 0.035 0.059 j 2.20 2.80 0.087 0.110 k 0.50 1.10 0.020 0.043 l 0.90 1.50 0.035 0.059 m 1.30 1.70 0.051 0.67
tsc136l high voltage npn transistor 5 / 6 version: b 09 sot - 251 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to - 2 51 di mension millimeters inches dim min max min max a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0 .58 0.018 0.023 d 5.97 6.10 0.235 0.240 e 6.35 6.73 0.250 0.265 e 2.28 bsc. 0.90 bsc. l 8.89 9.65 0.350 0.380 l1 1.91 2.28 0.075 0.090 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.045 0.060
tsc136l high voltage npn transistor 6 / 6 version: b 09 notice specifications of the prod ucts displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, exp ress or implied, to any intellectual property rights is granted by this document. except as provided in tsc? terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sa le and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for u se in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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